Vishay P-Channel MOSFET, 6 A, 60 V, 3-Pin TO-220FP IRFI9Z24GPBF

Nº de Estoque RS: 815-2727Marca: VishayPart Number: IRFI9Z24GPBF
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Especificações

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

37 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.63mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

4.83mm

Number of Elements per Chip

1

Transistor Material

Si

Height

16.12mm

Minimum Operating Temperature

-55 °C

País de Origem

China

Detalhes do produto

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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R$ 217,10

R$ 21,71 Each (In a Pack of 10) (Sem VAT)

Vishay P-Channel MOSFET, 6 A, 60 V, 3-Pin TO-220FP IRFI9Z24GPBF
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R$ 217,10

R$ 21,71 Each (In a Pack of 10) (Sem VAT)

Vishay P-Channel MOSFET, 6 A, 60 V, 3-Pin TO-220FP IRFI9Z24GPBF
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

QuantidadePreço unitárioPer Pacote
10 - 40R$ 21,71R$ 217,10
50 - 90R$ 19,86R$ 198,60
100 - 240R$ 19,03R$ 190,30
250 - 490R$ 17,98R$ 179,80
500+R$ 14,98R$ 149,80

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Você pode estar interessado em

Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

37 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.63mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

4.83mm

Number of Elements per Chip

1

Transistor Material

Si

Height

16.12mm

Minimum Operating Temperature

-55 °C

País de Origem

China

Detalhes do produto

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Você pode estar interessado em