Vishay N-Channel MOSFET, 2.7 A, 60 V, 3-Pin SOT-223 IRFL014TRPBF

Nº de Estoque RS: 815-2733Marca: VishayPart Number: IRFL014TRPBF
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Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.7 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Width

3.7mm

Length

6.7mm

Typical Gate Charge @ Vgs

11 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.8mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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R$ 212,40

R$ 10,62 Each (In a Pack of 20) (Sem VAT)

Vishay N-Channel MOSFET, 2.7 A, 60 V, 3-Pin SOT-223 IRFL014TRPBF
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R$ 212,40

R$ 10,62 Each (In a Pack of 20) (Sem VAT)

Vishay N-Channel MOSFET, 2.7 A, 60 V, 3-Pin SOT-223 IRFL014TRPBF

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitárioPer Pacote
20 - 20R$ 10,62R$ 212,40
40 - 80R$ 8,63R$ 172,60
100 - 180R$ 7,68R$ 153,60
200 - 480R$ 7,25R$ 145,00
500+R$ 6,10R$ 122,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
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Você pode estar interessado em

Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.7 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Width

3.7mm

Length

6.7mm

Typical Gate Charge @ Vgs

11 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.8mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
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