Vishay D Series N-Channel MOSFET, 20 A, 500 V, 3-Pin TO-247AC IRFP460BPBF

Nº de Estoque RS: 159-6516Marca: VishayPart Number: IRFP460BPBF
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Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

500 V

Series

D Series

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

278 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

5.31mm

Length

15.87mm

Typical Gate Charge @ Vgs

85 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

20.82mm

País de Origem

China

Detalhes do produto

N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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R$ 1.033,00

R$ 41,32 Each (In a Tube of 25) (Sem VAT)

Vishay D Series N-Channel MOSFET, 20 A, 500 V, 3-Pin TO-247AC IRFP460BPBF

R$ 1.033,00

R$ 41,32 Each (In a Tube of 25) (Sem VAT)

Vishay D Series N-Channel MOSFET, 20 A, 500 V, 3-Pin TO-247AC IRFP460BPBF

Informações de estoque temporariamente indisponíveis.

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitárioPer Tubo
25 - 25R$ 41,32R$ 1.033,00
50 - 100R$ 39,38R$ 984,50
125+R$ 36,17R$ 904,25

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

500 V

Series

D Series

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

278 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

5.31mm

Length

15.87mm

Typical Gate Charge @ Vgs

85 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

20.82mm

País de Origem

China

Detalhes do produto

N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more