Vishay N-Channel MOSFET, 6.1 A, 1000 V, 3-Pin TO-247AC IRFPG50PBF

Nº de Estoque RS: 541-1095Marca: VishayPart Number: IRFPG50PBFDistrelec Article No.: 30191596
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Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

6.1 A

Maximum Drain Source Voltage

1000 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

190 nC @ 10 V

Width

5.31mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.87mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

20.7mm

Detalhes do produto

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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R$ 76,94

R$ 76,94 Each (Sem VAT)

Vishay N-Channel MOSFET, 6.1 A, 1000 V, 3-Pin TO-247AC IRFPG50PBF
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R$ 76,94

R$ 76,94 Each (Sem VAT)

Vishay N-Channel MOSFET, 6.1 A, 1000 V, 3-Pin TO-247AC IRFPG50PBF

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitário
1 - 9R$ 76,94
10 - 24R$ 67,25
25 - 49R$ 63,56
50 - 99R$ 60,41
100+R$ 52,97

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

6.1 A

Maximum Drain Source Voltage

1000 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

190 nC @ 10 V

Width

5.31mm

Transistor Material

Si

Number of Elements per Chip

1

Length

15.87mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

20.7mm

Detalhes do produto

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more