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Vishay N-Channel MOSFET, 2.6 A, 200 V, 3-Pin DPAK IRFR210TRPBF

Nº de Estoque RS: 812-0616PMarca: VishayPart Number: IRFR210TRPBF
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Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.6 A

Maximum Drain Source Voltage

200 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Width

6.22mm

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

8.2 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

2.38mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

2V

País de Origem

Malaysia

Detalhes do produto

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Each (Supplied on a Reel) (Sem VAT)

Vishay N-Channel MOSFET, 2.6 A, 200 V, 3-Pin DPAK IRFR210TRPBF
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P.O.A.

Each (Supplied on a Reel) (Sem VAT)

Vishay N-Channel MOSFET, 2.6 A, 200 V, 3-Pin DPAK IRFR210TRPBF
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.6 A

Maximum Drain Source Voltage

200 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Width

6.22mm

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

8.2 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

2.38mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

2V

País de Origem

Malaysia

Detalhes do produto

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more