Vishay N-Channel MOSFET, 4.8 A, 200 V, 3-Pin DPAK IRFR220TRPBF

Nº de Estoque RS: 812-0629Marca: VishayPart Number: IRFR220TRPBF
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Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.8 A

Maximum Drain Source Voltage

200 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

800 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

14 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

2.38mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Informações de estoque temporariamente indisponíveis.

R$ 103,80

R$ 10,38 Each (In a Pack of 10) (Sem VAT)

Vishay N-Channel MOSFET, 4.8 A, 200 V, 3-Pin DPAK IRFR220TRPBF
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R$ 103,80

R$ 10,38 Each (In a Pack of 10) (Sem VAT)

Vishay N-Channel MOSFET, 4.8 A, 200 V, 3-Pin DPAK IRFR220TRPBF
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

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QuantidadePreço unitárioPer Pacote
10 - 90R$ 10,38R$ 103,80
100 - 240R$ 9,89R$ 98,90
250 - 490R$ 9,07R$ 90,70
500 - 990R$ 8,66R$ 86,60
1000+R$ 8,26R$ 82,60

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
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Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.8 A

Maximum Drain Source Voltage

200 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

800 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

14 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

2.38mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more