Vishay P-Channel MOSFET, 2.7 A, 250 V, 3-Pin DPAK IRFR9214TRPBF

Nº de Estoque RS: 812-0650Marca: VishayPart Number: IRFR9214TRPBF
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Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

2.7 A

Maximum Drain Source Voltage

250 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

14 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

2.38mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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R$ 163,40

R$ 16,34 Each (In a Pack of 10) (Sem VAT)

Vishay P-Channel MOSFET, 2.7 A, 250 V, 3-Pin DPAK IRFR9214TRPBF
Selecione o tipo de embalagem

R$ 163,40

R$ 16,34 Each (In a Pack of 10) (Sem VAT)

Vishay P-Channel MOSFET, 2.7 A, 250 V, 3-Pin DPAK IRFR9214TRPBF

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitárioPer Pacote
10 - 90R$ 16,34R$ 163,40
100 - 240R$ 15,79R$ 157,90
250 - 490R$ 14,35R$ 143,50
500 - 990R$ 13,70R$ 137,00
1000+R$ 11,80R$ 118,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

2.7 A

Maximum Drain Source Voltage

250 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

14 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

2.38mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more