Documentos Técnicos
Especificações
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
60 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Typical Gate Charge @ Vgs
18 nC @ 5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5mm
Width
6.29mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
3.37mm
Detalhes do produto
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Verifique novamente mais tarde.
R$ 34,24
Each (Sem VAT)
Padrão
1
R$ 34,24
Each (Sem VAT)
Padrão
1
Comprar em grandes quantidades
Quantidade | Preço unitário |
---|---|
1 - 9 | R$ 34,24 |
10 - 49 | R$ 29,58 |
50 - 99 | R$ 28,00 |
100 - 249 | R$ 26,94 |
250+ | R$ 25,52 |
Documentos Técnicos
Especificações
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
60 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Typical Gate Charge @ Vgs
18 nC @ 5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5mm
Width
6.29mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
3.37mm
Detalhes do produto