Documentos Técnicos
Especificações
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
100 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
760 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Width
3.7mm
Number of Elements per Chip
1
Length
6.7mm
Typical Gate Charge @ Vgs
6.1 nC @ 5 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Height
1.8mm
Minimum Operating Temperature
-55 °C
Detalhes do produto
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
P.O.A.
Each (Supplied on a Reel) (Sem VAT)
Embalagem de Produção (Bobina)
10
P.O.A.
Each (Supplied on a Reel) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Embalagem de Produção (Bobina)
10
Informações de estoque temporariamente indisponíveis.
Documentos Técnicos
Especificações
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
100 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
760 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Width
3.7mm
Number of Elements per Chip
1
Length
6.7mm
Typical Gate Charge @ Vgs
6.1 nC @ 5 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Height
1.8mm
Minimum Operating Temperature
-55 °C
Detalhes do produto


