Vishay N-Channel MOSFET, 7.7 A, 60 V, 3-Pin DPAK IRLR014TRPBF

Nº de Estoque RS: 813-0718Marca: VishayPart Number: IRLR014TRPBF
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Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

7.7 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Number of Elements per Chip

1

Length

6.73mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

8.4 nC @ 5 V

Width

6.22mm

Transistor Material

Si

Height

2.38mm

Minimum Operating Temperature

-55 °C

País de Origem

Malaysia

Detalhes do produto

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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R$ 161,50

R$ 16,15 Each (In a Pack of 10) (Sem VAT)

Vishay N-Channel MOSFET, 7.7 A, 60 V, 3-Pin DPAK IRLR014TRPBF
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R$ 161,50

R$ 16,15 Each (In a Pack of 10) (Sem VAT)

Vishay N-Channel MOSFET, 7.7 A, 60 V, 3-Pin DPAK IRLR014TRPBF

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitárioPer Pacote
10 - 90R$ 16,15R$ 161,50
100 - 240R$ 15,55R$ 155,50
250 - 490R$ 13,30R$ 133,00
500 - 990R$ 12,70R$ 127,00
1000+R$ 11,95R$ 119,50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

7.7 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Number of Elements per Chip

1

Length

6.73mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

8.4 nC @ 5 V

Width

6.22mm

Transistor Material

Si

Height

2.38mm

Minimum Operating Temperature

-55 °C

País de Origem

Malaysia

Detalhes do produto

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more