Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRLU110PBF

Nº de Estoque RS: 708-4884Marca: VishayPart Number: IRLU110PBF
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Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.3 A

Maximum Drain Source Voltage

100 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Typical Gate Charge @ Vgs

6.1 nC @ 5 V

Width

2.38mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Maximum Operating Temperature

+150 °C

Height

6.22mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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R$ 138,25

R$ 27,65 Each (In a Pack of 5) (Sem VAT)

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRLU110PBF
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R$ 138,25

R$ 27,65 Each (In a Pack of 5) (Sem VAT)

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRLU110PBF

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitárioPer Pacote
5 - 45R$ 27,65R$ 138,25
50 - 120R$ 22,42R$ 112,10
125 - 245R$ 21,38R$ 106,90
250 - 495R$ 18,79R$ 93,95
500+R$ 17,68R$ 88,40

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.3 A

Maximum Drain Source Voltage

100 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Typical Gate Charge @ Vgs

6.1 nC @ 5 V

Width

2.38mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Maximum Operating Temperature

+150 °C

Height

6.22mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more