Documentos Técnicos
Especificações
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
760 mA
Maximum Drain Source Voltage
30 V
Package Type
SC-89-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
244 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
236 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Transistor Material
Si
Width
1.2mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
4.43 nC @ 4.5 V
Length
1.7mm
Minimum Operating Temperature
-55 °C
Height
0.6mm
Detalhes do produto
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
R$ 102,40
R$ 5,12 Each (Supplied as a Tape) (Sem VAT)
Padrão
20
R$ 102,40
R$ 5,12 Each (Supplied as a Tape) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
20
Informações de estoque temporariamente indisponíveis.
| Quantidade | Preço unitário | Per Fita |
|---|---|---|
| 20 - 180 | R$ 5,12 | R$ 102,40 |
| 200 - 980 | R$ 4,87 | R$ 97,40 |
| 1000 - 1980 | R$ 4,49 | R$ 89,80 |
| 2000 - 4980 | R$ 4,31 | R$ 86,20 |
| 5000+ | R$ 4,12 | R$ 82,40 |
Documentos Técnicos
Especificações
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
760 mA
Maximum Drain Source Voltage
30 V
Package Type
SC-89-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
244 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
236 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Transistor Material
Si
Width
1.2mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
4.43 nC @ 4.5 V
Length
1.7mm
Minimum Operating Temperature
-55 °C
Height
0.6mm
Detalhes do produto


