P-Channel MOSFET, 1.2 A, 60 V, 3-Pin SOT-23 Vishay SI2309CDS-T1-GE3

Nº de Estoque RS: 710-3250Marca: VishayPart Number: SI2309CDS-T1-GE3
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Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

1.2 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

345 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Width

1.4mm

Typical Gate Charge @ Vgs

2.7 nC @ 4.5 V

Transistor Material

Si

Height

1.02mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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R$ 7,25

Each (In a Pack of 10) (Sem VAT)

P-Channel MOSFET, 1.2 A, 60 V, 3-Pin SOT-23 Vishay SI2309CDS-T1-GE3
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R$ 7,25

Each (In a Pack of 10) (Sem VAT)

P-Channel MOSFET, 1.2 A, 60 V, 3-Pin SOT-23 Vishay SI2309CDS-T1-GE3
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

1.2 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

345 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Width

1.4mm

Typical Gate Charge @ Vgs

2.7 nC @ 4.5 V

Transistor Material

Si

Height

1.02mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more