Documentos Técnicos
Especificações
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.15 A
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
730 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
3.3 nC @ 10 V
Width
1.4mm
Height
1.02mm
Minimum Operating Temperature
-55 °C
País de Origem
China
Detalhes do produto
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
R$ 141,40
R$ 14,14 Each (In a Pack of 10) (Sem VAT)
Padrão
10
R$ 141,40
R$ 14,14 Each (In a Pack of 10) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
10
Informações de estoque temporariamente indisponíveis.
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 10 - 90 | R$ 14,14 | R$ 141,40 |
| 100 - 240 | R$ 10,90 | R$ 109,00 |
| 250 - 490 | R$ 10,21 | R$ 102,10 |
| 500 - 990 | R$ 8,88 | R$ 88,80 |
| 1000+ | R$ 7,81 | R$ 78,10 |
Documentos Técnicos
Especificações
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.15 A
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
730 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
3.3 nC @ 10 V
Width
1.4mm
Height
1.02mm
Minimum Operating Temperature
-55 °C
País de Origem
China
Detalhes do produto


