Vishay N-Channel MOSFET, 6 A, 30 V, 3-Pin SOT-23 Si2338DS-T1-GE3

Nº de Estoque RS: 812-3126Marca: VishayPart Number: Si2338DS-T1-GE3
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Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

3.04mm

Typical Gate Charge @ Vgs

8.2 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Transistor Material

Si

Width

1.4mm

Height

1.02mm

Minimum Operating Temperature

-55 °C

País de Origem

China

Detalhes do produto

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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R$ 155,80

R$ 7,79 Each (In a Pack of 20) (Sem VAT)

Vishay N-Channel MOSFET, 6 A, 30 V, 3-Pin SOT-23 Si2338DS-T1-GE3
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R$ 155,80

R$ 7,79 Each (In a Pack of 20) (Sem VAT)

Vishay N-Channel MOSFET, 6 A, 30 V, 3-Pin SOT-23 Si2338DS-T1-GE3

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitárioPer Pacote
20 - 180R$ 7,79R$ 155,80
200 - 480R$ 6,07R$ 121,40
500 - 980R$ 5,77R$ 115,40
1000 - 1980R$ 5,28R$ 105,60
2000+R$ 4,96R$ 99,20

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

3.04mm

Typical Gate Charge @ Vgs

8.2 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Transistor Material

Si

Width

1.4mm

Height

1.02mm

Minimum Operating Temperature

-55 °C

País de Origem

China

Detalhes do produto

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more