N-Channel MOSFET, 5.9 A, 20 V, 3-Pin SOT-23 Vishay SI2374DS-T1-GE3

Nº de Estoque RS: 152-6360Marca: VishayPart Number: SI2374DS-T1-GE3
brand-logo
View all in MOSFETs

Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

5.9 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

41 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

13.4 nC @ 10 V

Width

1.4mm

Minimum Operating Temperature

-55 °C

Height

1.02mm

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

Informações de estoque temporariamente indisponíveis.

R$ 4,66

Each (In a Pack of 50) (Sem VAT)

N-Channel MOSFET, 5.9 A, 20 V, 3-Pin SOT-23 Vishay SI2374DS-T1-GE3
Selecione o tipo de embalagem

R$ 4,66

Each (In a Pack of 50) (Sem VAT)

N-Channel MOSFET, 5.9 A, 20 V, 3-Pin SOT-23 Vishay SI2374DS-T1-GE3
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Comprar em grandes quantidades

QuantidadePreço unitárioPer Pacote
50 - 200R$ 4,66R$ 233,00
250 - 450R$ 3,30R$ 165,00
500 - 1200R$ 2,96R$ 148,00
1250 - 2450R$ 2,18R$ 109,00
2500+R$ 1,74R$ 87,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

5.9 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

41 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.04mm

Typical Gate Charge @ Vgs

13.4 nC @ 10 V

Width

1.4mm

Minimum Operating Temperature

-55 °C

Height

1.02mm