P-Channel MOSFET, 3.5 A, 20 V, 3-Pin SOT-23 Vishay SI2377EDS-T1-GE3

Nº de Estoque RS: 812-3145Marca: VishayPart Number: SI2377EDS-T1-GE3
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Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

165 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

3.04mm

Typical Gate Charge @ Vgs

14 nC @ 8 V

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.02mm

País de Origem

China

Detalhes do produto

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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R$ 6,10

Each (In a Pack of 20) (Sem VAT)

P-Channel MOSFET, 3.5 A, 20 V, 3-Pin SOT-23 Vishay SI2377EDS-T1-GE3
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R$ 6,10

Each (In a Pack of 20) (Sem VAT)

P-Channel MOSFET, 3.5 A, 20 V, 3-Pin SOT-23 Vishay SI2377EDS-T1-GE3
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Comprar em grandes quantidades

QuantidadePreço unitárioPer Pacote
20 - 180R$ 6,10R$ 122,00
200 - 480R$ 4,72R$ 94,40
500 - 980R$ 4,42R$ 88,40
1000 - 1980R$ 3,84R$ 76,80
2000+R$ 3,37R$ 67,40

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

165 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

3.04mm

Typical Gate Charge @ Vgs

14 nC @ 8 V

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.02mm

País de Origem

China

Detalhes do produto

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more