P-Channel MOSFET, 8 A, 12 V, 6-Pin TSOP-6 Vishay SI3473CDV-T1-GE3

Nº de Estoque RS: 152-6366Marca: VishayPart Number: SI3473CDV-T1-GE3
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Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

12 V

Package Type

TSOP-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

36 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

-1V

Minimum Gate Threshold Voltage

-0.4V

Maximum Power Dissipation

4.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

3.1mm

Typical Gate Charge @ Vgs

43 nC @ 10 V

Width

1.7mm

Minimum Operating Temperature

-55 °C

Height

1mm

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R$ 10,22

Each (In a Pack of 25) (Sem VAT)

P-Channel MOSFET, 8 A, 12 V, 6-Pin TSOP-6 Vishay SI3473CDV-T1-GE3
Selecione o tipo de embalagem

R$ 10,22

Each (In a Pack of 25) (Sem VAT)

P-Channel MOSFET, 8 A, 12 V, 6-Pin TSOP-6 Vishay SI3473CDV-T1-GE3
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Comprar em grandes quantidades

QuantidadePreço unitárioPer Pacote
25 - 225R$ 10,22R$ 255,50
250 - 600R$ 9,76R$ 244,00
625 - 1225R$ 9,50R$ 237,50
1250 - 2475R$ 8,57R$ 214,25
2500+R$ 8,15R$ 203,75

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Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

12 V

Package Type

TSOP-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

36 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

-1V

Minimum Gate Threshold Voltage

-0.4V

Maximum Power Dissipation

4.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

3.1mm

Typical Gate Charge @ Vgs

43 nC @ 10 V

Width

1.7mm

Minimum Operating Temperature

-55 °C

Height

1mm