N-Channel MOSFET, 4.6 A, 80 V, 6-Pin SOT-23 Vishay SI3476DV-T1-GE3

Nº de Estoque RS: 152-6369Marca: VishayPart Number: SI3476DV-T1-GE3
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Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.6 A

Maximum Drain Source Voltage

80 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

126 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

3.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Typical Gate Charge @ Vgs

4.9 nC @ 10 V

Length

3.1mm

Maximum Operating Temperature

+150 °C

Width

1.7mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

1mm

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R$ 7,28

Each (In a Pack of 25) (Sem VAT)

N-Channel MOSFET, 4.6 A, 80 V, 6-Pin SOT-23 Vishay SI3476DV-T1-GE3
Selecione o tipo de embalagem

R$ 7,28

Each (In a Pack of 25) (Sem VAT)

N-Channel MOSFET, 4.6 A, 80 V, 6-Pin SOT-23 Vishay SI3476DV-T1-GE3
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Comprar em grandes quantidades

QuantidadePreço unitárioPer Pacote
25 - 225R$ 7,28R$ 182,00
250 - 600R$ 6,95R$ 173,75
625 - 1225R$ 6,41R$ 160,25
1250 - 2475R$ 6,10R$ 152,50
2500+R$ 5,81R$ 145,25

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Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.6 A

Maximum Drain Source Voltage

80 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

126 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

3.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Typical Gate Charge @ Vgs

4.9 nC @ 10 V

Length

3.1mm

Maximum Operating Temperature

+150 °C

Width

1.7mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

1mm