Documentos Técnicos
Especificações
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
20 V
Package Type
TSOP-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
51 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
3.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
34.8 nC @ 8 V
Height
1mm
Series
TrenchFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Detalhes do produto
P-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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R$ 2,75
Each (On a Reel of 3000) (Sem VAT)
3000
R$ 2,75
Each (On a Reel of 3000) (Sem VAT)
3000
Comprar em grandes quantidades
Quantidade | Preço unitário | Per Bobina |
---|---|---|
3000 - 3000 | R$ 2,75 | R$ 8.250,00 |
6000+ | R$ 2,62 | R$ 7.860,00 |
Documentos Técnicos
Especificações
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
20 V
Package Type
TSOP-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
51 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
3.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.7mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
34.8 nC @ 8 V
Height
1mm
Series
TrenchFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Detalhes do produto