P-Channel MOSFET, 8 A, 20 V, 6-Pin TSOP-6 Vishay SI3493DDV-T1-GE3

Nº de Estoque RS: 134-9155Marca: VishayPart Number: SI3493DDV-T1-GE3
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Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

20 V

Package Type

TSOP-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

51 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

3.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Width

1.7mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.1mm

Typical Gate Charge @ Vgs

34.8 nC @ 8 V

Height

1mm

Series

TrenchFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Detalhes do produto

P-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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R$ 2,75

Each (On a Reel of 3000) (Sem VAT)

P-Channel MOSFET, 8 A, 20 V, 6-Pin TSOP-6 Vishay SI3493DDV-T1-GE3

R$ 2,75

Each (On a Reel of 3000) (Sem VAT)

P-Channel MOSFET, 8 A, 20 V, 6-Pin TSOP-6 Vishay SI3493DDV-T1-GE3
Informações de estoque temporariamente indisponíveis.

Comprar em grandes quantidades

QuantidadePreço unitárioPer Bobina
3000 - 3000R$ 2,75R$ 8.250,00
6000+R$ 2,62R$ 7.860,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

20 V

Package Type

TSOP-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

51 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

3.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Width

1.7mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.1mm

Typical Gate Charge @ Vgs

34.8 nC @ 8 V

Height

1mm

Series

TrenchFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Detalhes do produto

P-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more