N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Vishay Si4134DY-T1-GE3

Nº de Estoque RS: 710-3320Marca: VishayPart Number: Si4134DY-T1-GE3
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Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

9.9 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

5mm

Width

4mm

Typical Gate Charge @ Vgs

15.4 nC @ 10 V, 7.3 nC @ 4.5 V

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

1.5mm

País de Origem

China

Detalhes do produto

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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R$ 11,22

Each (In a Pack of 10) (Sem VAT)

N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Vishay Si4134DY-T1-GE3
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R$ 11,22

Each (In a Pack of 10) (Sem VAT)

N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Vishay Si4134DY-T1-GE3
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Comprar em grandes quantidades

QuantidadePreço unitárioPer Pacote
10 - 90R$ 11,22R$ 112,20
100 - 240R$ 10,68R$ 106,80
250 - 490R$ 9,83R$ 98,30
500 - 990R$ 9,40R$ 94,00
1000+R$ 8,93R$ 89,30

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

9.9 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

5mm

Width

4mm

Typical Gate Charge @ Vgs

15.4 nC @ 10 V, 7.3 nC @ 4.5 V

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

1.5mm

País de Origem

China

Detalhes do produto

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more