Vishay Dual N/P-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC SI4532CDY-T1-GE3

Nº de Estoque RS: 787-9020Marca: VishayPart Number: SI4532CDY-T1-GE3
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Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

4.3 A, 6 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

65 mΩ, 140 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.78 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

6 nC @ 10 V, 7.8 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

5mm

Width

4mm

Transistor Material

Si

Number of Elements per Chip

2

Height

1.5mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

Dual N/P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Informações de estoque temporariamente indisponíveis.

R$ 218,40

R$ 10,92 Each (In a Pack of 20) (Sem VAT)

Vishay Dual N/P-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC SI4532CDY-T1-GE3
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R$ 218,40

R$ 10,92 Each (In a Pack of 20) (Sem VAT)

Vishay Dual N/P-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC SI4532CDY-T1-GE3
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

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QuantidadePreço unitárioPer Pacote
20 - 180R$ 10,92R$ 218,40
200 - 480R$ 9,42R$ 188,40
500 - 980R$ 9,01R$ 180,20
1000 - 1980R$ 8,58R$ 171,60
2000+R$ 8,09R$ 161,80

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

4.3 A, 6 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

65 mΩ, 140 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.78 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

6 nC @ 10 V, 7.8 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

5mm

Width

4mm

Transistor Material

Si

Number of Elements per Chip

2

Height

1.5mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

Dual N/P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more