Dual N/P-Channel-Channel MOSFET, 4 A, 20 V, 8-Pin 1206 ChipFET Vishay SI5515CDC-T1-GE3

Nº de Estoque RS: 180-7304Marca: VishayPart Number: SI5515CDC-T1-GE3
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Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

20 V

Package Type

1206 ChipFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.05 O,0.156 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.8V

Number of Elements per Chip

2

Series

TrenchFET

País de Origem

China

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R$ 6,37

Each (On a Reel of 3000) (Sem VAT)

Dual N/P-Channel-Channel MOSFET, 4 A, 20 V, 8-Pin 1206 ChipFET Vishay SI5515CDC-T1-GE3

R$ 6,37

Each (On a Reel of 3000) (Sem VAT)

Dual N/P-Channel-Channel MOSFET, 4 A, 20 V, 8-Pin 1206 ChipFET Vishay SI5515CDC-T1-GE3
Informações de estoque temporariamente indisponíveis.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

20 V

Package Type

1206 ChipFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.05 O,0.156 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.8V

Number of Elements per Chip

2

Series

TrenchFET

País de Origem

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more