Vishay P-Channel MOSFET, 9.6 A, 30 V, 8-Pin PowerPAK 1212-8 SI7121DN-T1-GE3

Nº de Estoque RS: 818-1380Marca: VishayPart Number: SI7121DN-T1-GE3
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Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

9.6 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

26 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

27.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

3.15mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.15mm

Typical Gate Charge @ Vgs

33 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.07mm

Minimum Operating Temperature

-50 °C

País de Origem

China

Detalhes do produto

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Informações de estoque temporariamente indisponíveis.

R$ 190,10

R$ 19,01 Each (In a Pack of 10) (Sem VAT)

Vishay P-Channel MOSFET, 9.6 A, 30 V, 8-Pin PowerPAK 1212-8 SI7121DN-T1-GE3
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R$ 190,10

R$ 19,01 Each (In a Pack of 10) (Sem VAT)

Vishay P-Channel MOSFET, 9.6 A, 30 V, 8-Pin PowerPAK 1212-8 SI7121DN-T1-GE3
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

QuantidadePreço unitárioPer Pacote
10 - 90R$ 19,01R$ 190,10
100 - 240R$ 15,44R$ 154,40
250 - 490R$ 12,14R$ 121,40
500 - 990R$ 10,94R$ 109,40
1000+R$ 9,50R$ 95,00

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

9.6 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

26 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

27.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

3.15mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.15mm

Typical Gate Charge @ Vgs

33 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.07mm

Minimum Operating Temperature

-50 °C

País de Origem

China

Detalhes do produto

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more