Documentos Técnicos
Especificações
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.8 A
Maximum Drain Source Voltage
60 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
14.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.55mm
Minimum Operating Temperature
-55 °C
País de Origem
China
Detalhes do produto
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
R$ 384,40
R$ 19,22 Each (In a Pack of 20) (Sem VAT)
Padrão
20
R$ 384,40
R$ 19,22 Each (In a Pack of 20) (Sem VAT)
Padrão
20
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
Quantidade | Preço unitário | Per Pacote |
---|---|---|
20 - 80 | R$ 19,22 | R$ 384,40 |
100 - 180 | R$ 14,82 | R$ 296,40 |
200 - 480 | R$ 13,86 | R$ 277,20 |
500 - 980 | R$ 11,05 | R$ 221,00 |
1000+ | R$ 10,62 | R$ 212,40 |
Documentos Técnicos
Especificações
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.8 A
Maximum Drain Source Voltage
60 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
14.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.55mm
Minimum Operating Temperature
-55 °C
País de Origem
China
Detalhes do produto