Vishay E N-Channel MOSFET, 8 A, 800 V, 3-Pin D2PAK SIHB11N80AE-GE3

Nº de Estoque RS: 210-4967Marca: VishayPart Number: SIHB11N80AE-GE3
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Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

800 V

Series

E

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.391 Ω

Maximum Gate Threshold Voltage

2 → 4V

Number of Elements per Chip

1

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R$ 109,50

R$ 21,90 Each (In a Pack of 5) (Sem VAT)

Vishay E N-Channel MOSFET, 8 A, 800 V, 3-Pin D2PAK SIHB11N80AE-GE3
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R$ 109,50

R$ 21,90 Each (In a Pack of 5) (Sem VAT)

Vishay E N-Channel MOSFET, 8 A, 800 V, 3-Pin D2PAK SIHB11N80AE-GE3

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitárioPer Pacote
5 - 45R$ 21,90R$ 109,50
50 - 120R$ 20,02R$ 100,10
125 - 245R$ 19,26R$ 96,30
250 - 495R$ 18,36R$ 91,80
500+R$ 17,21R$ 86,05

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

800 V

Series

E

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.391 Ω

Maximum Gate Threshold Voltage

2 → 4V

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more