Documentos Técnicos
Especificações
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
600 V
Package Type
D2PAK (TO-263)
Series
EF Series
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
123 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
10.67mm
Typical Gate Charge @ Vgs
80 nC @ 10 V
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
4.83mm
Minimum Operating Temperature
-55 °C
País de Origem
China
Detalhes do produto
N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
R$ 58,69
Each (In a Pack of 2) (Sem VAT)
Padrão
2
R$ 58,69
Each (In a Pack of 2) (Sem VAT)
Padrão
2
Documentos Técnicos
Especificações
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
600 V
Package Type
D2PAK (TO-263)
Series
EF Series
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
123 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
10.67mm
Typical Gate Charge @ Vgs
80 nC @ 10 V
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
4.83mm
Minimum Operating Temperature
-55 °C
País de Origem
China
Detalhes do produto