Documentos Técnicos
Especificações
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
600 V
Series
EF Series
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
123 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
9.65mm
Length
10.67mm
Typical Gate Charge @ Vgs
80 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
4.83mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
País de Origem
China
Detalhes do produto
N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
R$ 61.820,00
R$ 61,82 Each (In a Bag of 1000) (Sem VAT)
1000
R$ 61.820,00
R$ 61,82 Each (In a Bag of 1000) (Sem VAT)
1000
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
Documentos Técnicos
Especificações
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
600 V
Series
EF Series
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
123 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
9.65mm
Length
10.67mm
Typical Gate Charge @ Vgs
80 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
4.83mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
País de Origem
China
Detalhes do produto