N-Channel MOSFET, 25 A, 600 V, 4-Pin PowerPAK 8 x 8 Vishay SIHH26N60E-T1-GE3
Documentos Técnicos
Especificações
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
600 V
Package Type
PowerPAK 8 x 8
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
135 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
202 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Length
8.1mm
Typical Gate Charge @ Vgs
77 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
8.1mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
1mm
Series
E Series
Minimum Operating Temperature
-55 °C
País de Origem
Taiwan, Province Of China
Detalhes do produto
N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor
The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).
MOSFET Transistors, Vishay Semiconductor
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R$ 86,47
Each (Sem VAT)
1
R$ 86,47
Each (Sem VAT)
1
Comprar em grandes quantidades
| Quantidade | Preço unitário |
|---|---|
| 1 - 9 | R$ 86,47 |
| 10 - 49 | R$ 64,96 |
| 50 - 99 | R$ 55,37 |
| 100 - 249 | R$ 49,70 |
| 250+ | R$ 47,75 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificações
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
600 V
Package Type
PowerPAK 8 x 8
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
135 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
202 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Length
8.1mm
Typical Gate Charge @ Vgs
77 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
8.1mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
1mm
Series
E Series
Minimum Operating Temperature
-55 °C
País de Origem
Taiwan, Province Of China
Detalhes do produto
N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor
The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products