Vishay N-Channel MOSFET, 27 A, 40 V, 8-Pin PowerPAK SO-8 SIR416DP-T1-GE3

Nº de Estoque RS: 814-1272Marca: VishayPart Number: SIR416DP-T1-GE3
brand-logo
Ver tudo em MOSFETs

Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

27 A

Maximum Drain Source Voltage

40 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4.2 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

69 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

6.25mm

Typical Gate Charge @ Vgs

59 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

5.26mm

Transistor Material

Si

Height

1.12mm

Minimum Operating Temperature

-55 °C

País de Origem

China

Detalhes do produto

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

R$ 195,60

R$ 19,56 Each (In a Pack of 10) (Sem VAT)

Vishay N-Channel MOSFET, 27 A, 40 V, 8-Pin PowerPAK SO-8 SIR416DP-T1-GE3
Selecione o tipo de embalagem

R$ 195,60

R$ 19,56 Each (In a Pack of 10) (Sem VAT)

Vishay N-Channel MOSFET, 27 A, 40 V, 8-Pin PowerPAK SO-8 SIR416DP-T1-GE3

Informações de estoque temporariamente indisponíveis.

Selecione o tipo de embalagem

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitárioPer Pacote
10 - 90R$ 19,56R$ 195,60
100 - 240R$ 18,68R$ 186,80
250 - 490R$ 17,14R$ 171,40
500 - 990R$ 16,37R$ 163,70
1000+R$ 15,58R$ 155,80

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

27 A

Maximum Drain Source Voltage

40 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4.2 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

69 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

6.25mm

Typical Gate Charge @ Vgs

59 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

5.26mm

Transistor Material

Si

Height

1.12mm

Minimum Operating Temperature

-55 °C

País de Origem

China

Detalhes do produto

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more