Documentos Técnicos
Especificações
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
27 A
Maximum Drain Source Voltage
40 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4.2 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
69 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
6.25mm
Typical Gate Charge @ Vgs
59 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.26mm
Transistor Material
Si
Height
1.12mm
Minimum Operating Temperature
-55 °C
País de Origem
China
Detalhes do produto
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
R$ 195,60
R$ 19,56 Each (In a Pack of 10) (Sem VAT)
Padrão
10
R$ 195,60
R$ 19,56 Each (In a Pack of 10) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
10
Informações de estoque temporariamente indisponíveis.
| Quantidade | Preço unitário | Per Pacote |
|---|---|---|
| 10 - 90 | R$ 19,56 | R$ 195,60 |
| 100 - 240 | R$ 18,68 | R$ 186,80 |
| 250 - 490 | R$ 17,14 | R$ 171,40 |
| 500 - 990 | R$ 16,37 | R$ 163,70 |
| 1000+ | R$ 15,58 | R$ 155,80 |
Documentos Técnicos
Especificações
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
27 A
Maximum Drain Source Voltage
40 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4.2 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
69 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
6.25mm
Typical Gate Charge @ Vgs
59 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.26mm
Transistor Material
Si
Height
1.12mm
Minimum Operating Temperature
-55 °C
País de Origem
China
Detalhes do produto


