P-Channel MOSFET, 22 A, 20 V, 8-Pin PowerPAK 1212-8 Vishay SIS415DNT-T1-GE3
Documentos Técnicos
Especificações
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
20 V
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.5 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
3.4mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
117 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
0.8mm
Detalhes do produto
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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P.O.A.
20
P.O.A.
20
Ideate. Create. Collaborate
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Documentos Técnicos
Especificações
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
20 V
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.5 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
3.4mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
117 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
0.8mm
Detalhes do produto
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products