N-Channel MOSFET, 30 A, 80 V, 8-Pin PowerPAK 1212-8 Vishay SIS468DN-T1-GE3
Documentos Técnicos
Especificações
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
80 V
Series
ThunderFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
18.1 nC @ 10 V
Width
3.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.12mm
Detalhes do produto
N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
R$ 112,10
R$ 22,42 Each (Supplied as a Tape) (Sem VAT)
Padrão
5
R$ 112,10
R$ 22,42 Each (Supplied as a Tape) (Sem VAT)
Padrão
5
Comprar em grandes quantidades
| Quantidade | Preço unitário | Per Fita |
|---|---|---|
| 5 - 45 | R$ 22,42 | R$ 112,10 |
| 50 - 245 | R$ 20,45 | R$ 102,25 |
| 250 - 495 | R$ 19,61 | R$ 98,05 |
| 500 - 1245 | R$ 15,23 | R$ 76,15 |
| 1250+ | R$ 13,81 | R$ 69,05 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificações
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
80 V
Series
ThunderFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
18.1 nC @ 10 V
Width
3.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.12mm
Detalhes do produto
N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products