Documentos Técnicos
Especificações
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
27 A
Maximum Drain Source Voltage
20 V
Series
TrenchFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
11.5 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Length
3.3mm
Typical Gate Charge @ Vgs
195 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
3.3mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.78mm
País de Origem
China
Detalhes do produto
P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
P.O.A.
Each (Supplied on a Reel) (Sem VAT)
Embalagem de Produção (Bobina)
20
P.O.A.
Each (Supplied on a Reel) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Embalagem de Produção (Bobina)
20
Informações de estoque temporariamente indisponíveis.
Documentos Técnicos
Especificações
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
27 A
Maximum Drain Source Voltage
20 V
Series
TrenchFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
11.5 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Length
3.3mm
Typical Gate Charge @ Vgs
195 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
3.3mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.78mm
País de Origem
China
Detalhes do produto


