Vishay P-Channel MOSFET, 55 A, 60 V, 3-Pin D2PAK SUM55P06-19L-E3

Nº de Estoque RS: 710-5020Marca: VishayPart Number: SUM55P06-19L-E3
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Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

60 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

19 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

76 nC @ 10 V

Width

9.65mm

Height

4.83mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Informações de estoque temporariamente indisponíveis.

R$ 239,95

R$ 47,99 Each (In a Pack of 5) (Sem VAT)

Vishay P-Channel MOSFET, 55 A, 60 V, 3-Pin D2PAK SUM55P06-19L-E3
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R$ 239,95

R$ 47,99 Each (In a Pack of 5) (Sem VAT)

Vishay P-Channel MOSFET, 55 A, 60 V, 3-Pin D2PAK SUM55P06-19L-E3
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

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QuantidadePreço unitárioPer Pacote
5 - 45R$ 47,99R$ 239,95
50 - 120R$ 41,89R$ 209,45
125 - 245R$ 39,58R$ 197,90
250 - 495R$ 37,61R$ 188,05
500+R$ 30,56R$ 152,80

Ideate. Create. Collaborate

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No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
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Documentos Técnicos

Especificações

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

60 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

19 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

76 nC @ 10 V

Width

9.65mm

Height

4.83mm

Minimum Operating Temperature

-55 °C

Detalhes do produto

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more