Documentos Técnicos
Especificações
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
100 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
9.65mm
Width
10.41mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Typical Gate Charge @ Vgs
76 nC @ 10 V
Height
4.82mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
País de Origem
Taiwan, Province Of China
Detalhes do produto
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Verifique novamente mais tarde.
R$ 49,73
Each (In a Pack of 5) (Sem VAT)
5
R$ 49,73
Each (In a Pack of 5) (Sem VAT)
5
Comprar em grandes quantidades
Quantidade | Preço unitário | Per Pacote |
---|---|---|
5 - 45 | R$ 49,73 | R$ 248,65 |
50 - 120 | R$ 37,37 | R$ 186,85 |
125 - 245 | R$ 34,37 | R$ 171,85 |
250 - 495 | R$ 31,19 | R$ 155,95 |
500+ | R$ 29,06 | R$ 145,30 |
Documentos Técnicos
Especificações
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
100 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
9.65mm
Width
10.41mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Typical Gate Charge @ Vgs
76 nC @ 10 V
Height
4.82mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
País de Origem
Taiwan, Province Of China
Detalhes do produto