SiC N-Channel MOSFET, 5.3 A, 1700 V, 7-Pin D2PAK Wolfspeed C2M1000170J

Nº de Estoque RS: 915-8833Marca: WolfspeedPart Number: C2M1000170J
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

5.3 A

Maximum Drain Source Voltage

1700 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

78 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +25 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.23mm

Typical Gate Charge @ Vgs

13 nC @ 20 V

Width

10.99mm

Transistor Material

SiC

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

3.8V

Height

4.57mm

País de Origem

China

Detalhes do produto

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

MOSFET Transistors, Wolfspeed

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R$ 126,10

Each (In a Pack of 2) (Sem VAT)

SiC N-Channel MOSFET, 5.3 A, 1700 V, 7-Pin D2PAK Wolfspeed C2M1000170J
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R$ 126,10

Each (In a Pack of 2) (Sem VAT)

SiC N-Channel MOSFET, 5.3 A, 1700 V, 7-Pin D2PAK Wolfspeed C2M1000170J
Informações de estoque temporariamente indisponíveis.
Selecione o tipo de embalagem

Comprar em grandes quantidades

QuantidadePreço unitárioPer Pacote
2 - 8R$ 126,10R$ 252,20
10 - 18R$ 120,11R$ 240,22
20 - 48R$ 118,97R$ 237,94
50 - 98R$ 117,52R$ 235,04
100+R$ 115,86R$ 231,72

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

5.3 A

Maximum Drain Source Voltage

1700 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

78 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +25 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.23mm

Typical Gate Charge @ Vgs

13 nC @ 20 V

Width

10.99mm

Transistor Material

SiC

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

3.8V

Height

4.57mm

País de Origem

China

Detalhes do produto

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

MOSFET Transistors, Wolfspeed

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more