Documentos Técnicos
Especificações
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
36 A
Maximum Drain Source Voltage
900 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
78 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +18 V
Number of Elements per Chip
1
Length
16.13mm
Typical Gate Charge @ Vgs
30.4 nC @ 15 V
Width
21.1mm
Transistor Material
SiC
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
5.21mm
Forward Diode Voltage
4.8V
País de Origem
China
Detalhes do produto
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
R$ 297,79
Each (Sem VAT)
1
R$ 297,79
Each (Sem VAT)
1
Comprar em grandes quantidades
Quantidade | Preço unitário |
---|---|
1 - 4 | R$ 297,79 |
5 - 9 | R$ 286,10 |
10 - 29 | R$ 283,22 |
30 - 89 | R$ 279,28 |
90+ | R$ 276,36 |
Documentos Técnicos
Especificações
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
36 A
Maximum Drain Source Voltage
900 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
78 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +18 V
Number of Elements per Chip
1
Length
16.13mm
Typical Gate Charge @ Vgs
30.4 nC @ 15 V
Width
21.1mm
Transistor Material
SiC
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
5.21mm
Forward Diode Voltage
4.8V
País de Origem
China
Detalhes do produto
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.