Wolfspeed SiC N-Channel MOSFET, 36 A, 900 V, 3-Pin TO-247 C3M0065090D
Documentos Técnicos
Especificações
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
36 A
Maximum Drain Source Voltage
900 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
78 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +18 V
Width
21.1mm
Transistor Material
SiC
Number of Elements per Chip
1
Length
16.13mm
Typical Gate Charge @ Vgs
30.4 nC @ 15 V
Maximum Operating Temperature
+150 °C
Height
5.21mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4.8V
País de Origem
China
Detalhes do produto
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
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R$ 333,31
R$ 333,31 Each (Sem VAT)
Padrão
1
R$ 333,31
R$ 333,31 Each (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
1
Informações de estoque temporariamente indisponíveis.
| Quantidade | Preço unitário |
|---|---|
| 1 - 4 | R$ 333,31 |
| 5 - 9 | R$ 320,12 |
| 10 - 29 | R$ 316,88 |
| 30 - 89 | R$ 312,53 |
| 90+ | R$ 309,26 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificações
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
36 A
Maximum Drain Source Voltage
900 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
78 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +18 V
Width
21.1mm
Transistor Material
SiC
Number of Elements per Chip
1
Length
16.13mm
Typical Gate Charge @ Vgs
30.4 nC @ 15 V
Maximum Operating Temperature
+150 °C
Height
5.21mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4.8V
País de Origem
China
Detalhes do produto
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products