Wolfspeed C3M SiC N-Channel MOSFET, 22 A, 1000 V, 7-Pin D2PAK C3M0120100J

Nº de Estoque RS: 150-3947Marca: WolfspeedPart Number: C3M0120100J
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Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

1000 V

Series

C3M

Package Type

TO-263-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

170 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+15 V, +9 V

Width

9.12mm

Transistor Material

SiC

Number of Elements per Chip

1

Length

10.23mm

Typical Gate Charge @ Vgs

21.5 @ 4/+15 V

Maximum Operating Temperature

+150 °C

Height

4.32mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

4.8V

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R$ 10.242,00

R$ 204,84 Each (In a Tube of 50) (Sem VAT)

Wolfspeed C3M SiC N-Channel MOSFET, 22 A, 1000 V, 7-Pin D2PAK C3M0120100J

R$ 10.242,00

R$ 204,84 Each (In a Tube of 50) (Sem VAT)

Wolfspeed C3M SiC N-Channel MOSFET, 22 A, 1000 V, 7-Pin D2PAK C3M0120100J

Informações de estoque temporariamente indisponíveis.

Informações de estoque temporariamente indisponíveis.

QuantidadePreço unitárioPer Tubo
50 - 100R$ 204,84R$ 10.242,00
150 - 200R$ 199,88R$ 9.994,00
250+R$ 198,06R$ 9.903,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

1000 V

Series

C3M

Package Type

TO-263-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

170 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+15 V, +9 V

Width

9.12mm

Transistor Material

SiC

Number of Elements per Chip

1

Length

10.23mm

Typical Gate Charge @ Vgs

21.5 @ 4/+15 V

Maximum Operating Temperature

+150 °C

Height

4.32mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

4.8V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more