Wolfspeed SiC MOSFET, 1200 V CAB450M12XM3

Nº de Estoque RS: 192-3386Marca: WolfspeedPart Number: CAB450M12XM3
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Especificações

Maximum Drain Source Voltage

1200 V

Maximum Drain Source Resistance

4.6 mΩ

Maximum Gate Threshold Voltage

3.6V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

50 mW

Maximum Gate Source Voltage

-4 V, 19 V

Number of Elements per Chip

1

Width

53mm

Length

80mm

Typical Gate Charge @ Vgs

1330 nC @ 4/15V

Transistor Material

SiC

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-40 °C

Height

15.75mm

País de Origem

United States

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Informações de estoque temporariamente indisponíveis.

R$ 22.905,24

R$ 22.905,24 Each (Sem VAT)

Wolfspeed SiC MOSFET, 1200 V CAB450M12XM3

R$ 22.905,24

R$ 22.905,24 Each (Sem VAT)

Wolfspeed SiC MOSFET, 1200 V CAB450M12XM3
Informações de estoque temporariamente indisponíveis.

Informações de estoque temporariamente indisponíveis.

Verifique novamente mais tarde.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Documentos Técnicos

Especificações

Maximum Drain Source Voltage

1200 V

Maximum Drain Source Resistance

4.6 mΩ

Maximum Gate Threshold Voltage

3.6V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

50 mW

Maximum Gate Source Voltage

-4 V, 19 V

Number of Elements per Chip

1

Width

53mm

Length

80mm

Typical Gate Charge @ Vgs

1330 nC @ 4/15V

Transistor Material

SiC

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-40 °C

Height

15.75mm

País de Origem

United States

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more