MOSFET Transistors

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Detalhes da peça Brand Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Dimensions Typical Turn-Off Delay Time Series Typical Turn-On Delay Time Forward Transconductance Width Height Length Forward Diode Voltage Maximum Operating Temperature Number of Elements per Chip Minimum Operating Temperature Transistor Material
MOSFET, N-CHANNEL ENCHANCEMENT-MODE, 60V Microchip Technology N 350 mA 60 (Minimum) V 4.5 Ω 2V 0.6V 20 V TO-92 Through Hole 3 Single Enhancement Driver MOSFET 1 W 50 pF @ 25 V - 0.2 x 0.16 x 0.21in 6 ns TN0106 2 ns - 4.06mm 5.33mm 5.08mm 1.5V +150 °C 1 -55 °C -
MOSFET, N-CHANNEL ENCHANCEMENT-MODE, 60V Microchip Technology N 350 mA 60 (Minimum) V 4.5 Ω 2V 0.6V 20 V TO-92 Through Hole 3 Single Enhancement Driver MOSFET 1 W 50 pF @ 25 V - 0.2 x 0.16 x 0.21in 6 ns TN0106 2 ns - 4.06mm 5.33mm 5.08mm 1.5V +150 °C 1 -55 °C -
MOSFET, N-CHANNEL ENHANCEMENT MODE, 60V, Microchip Technology N 200 mA 60 (Minimum) V 5.3 Ω 3V 0.8V 30 V TO-92 Through Hole 3 Single Enhancement Driver MOSFET 1 W 60 (Maximum) pF @ 25 V - 0.2 x 0.16 x 0.21in 10 (Maximum) ns 2N7000 10 (Maximum) ns - 4.06mm 5.33mm 5.08mm 0.85V +150 °C 1 -55 °C -
MOSFET, N-CHANNEL ENHANCEMENT MODE, 60V, Microchip Technology N 200 mA 60 (Minimum) V 5.3 Ω 3V 0.8V 30 V TO-92 Through Hole 3 Single Enhancement Driver MOSFET 1 W 60 (Maximum) pF @ 25 V - 0.2 x 0.16 x 0.21in 10 (Maximum) ns 2N7000 10 (Maximum) ns - 4.06mm 5.33mm 5.08mm 0.85V +150 °C 1 -55 °C -
MOSFET, N-CHANNEL ENHANCEMENT MODE, 90V, Microchip Technology N 350 mA 90 (Minimum) V 5 Ω 2V 0.8V 20 V TO-39 Through Hole 3 Single Enhancement Driver MOSFET 6.25 W 50 (Maximum) pF @ 24 V - 0.37 (Dia.) x 0.26in 10 (Maximum) ns 2N6661 10 (Maximum) ns - 9.398 Dia.mm 6.6mm - 1.2V +150 °C 1 -55 °C -
MOSFET, N-CHANNEL ENHANCEMENT MODE, 90V, Microchip Technology N 350 mA 90 (Minimum) V 5 Ω 2V 0.8V 20 V TO-39 Through Hole 3 Single Enhancement Driver MOSFET 6.25 W 50 (Maximum) pF @ 24 V - 0.37 (Dia.) x 0.26in 10 (Maximum) ns 2N6661 10 (Maximum) ns - 9.398 Dia.mm 6.6mm - 1.2V +150 °C 1 -55 °C -
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 100V Microchip Technology N 350 mA 100 (Minimum) V 4.5 Ω 2V 0.6V 20 V TO-92 Through Hole 3 Single Enhancement Driver MOSFET 1 W 50 pF @ 25 V - 0.2 x 0.16 x 0.21in 6 ns TN0110 2 ns - 4.06mm 5.33mm 5.08mm 1.5V +150 °C 1 -55 °C -
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 100V Microchip Technology N 350 mA 100 (Minimum) V 4.5 Ω 2V 0.6V 20 V TO-92 Through Hole 3 Single Enhancement Driver MOSFET 1 W 50 pF @ 25 V - 0.2 x 0.16 x 0.21in 6 ns TN0110 2 ns - 4.06mm 5.33mm 5.08mm 1.5V +150 °C 1 -55 °C -
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 30V, Microchip Technology N 640 mA 30 (Minimum) V 3.3 Ω 2.5V 0.8V 30 V TO-92 Through Hole 3 Single Enhancement Driver MOSFET 1 W 190 (Maximum) pF @ 20 V - 0.2 x 0.16 x 0.21in 30 (Maximum) ns VN0300 30 (Maximum) ns - 4.06mm 5.33mm 5.08mm 0.9V +150 °C 1 -55 °C -
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 30V, Microchip Technology N 640 mA 30 (Minimum) V 3.3 Ω 2.5V 0.8V 30 V TO-92 Through Hole 3 Single Enhancement Driver MOSFET 1 W 190 (Maximum) pF @ 20 V - 0.2 x 0.16 x 0.21in 30 (Maximum) ns VN0300 30 (Maximum) ns - 4.06mm 5.33mm 5.08mm 0.9V +150 °C 1 -55 °C -
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 400V Microchip Technology N 260 mA 400 (Minimum) V 12 Ω 2V 0.6V 20 V TO-243AA Surface Mount 3 Single Enhancement Driver MOSFET 1.6 W 95 pF @ 25 V - 4.6 x 2.6 x 1.6mm 25 (Maximum) ns TN2540 20 (Maximum) ns - 2.6mm 1.6mm 4.6mm 1.8V +150 °C 1 -55 °C -
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 400V Microchip Technology N 260 mA 400 (Minimum) V 12 Ω 2V 0.6V 20 V TO-243AA Surface Mount 3 Single Enhancement Driver MOSFET 1.6 W 95 pF @ 25 V - 4.6 x 2.6 x 1.6mm 25 (Maximum) ns TN2540 20 (Maximum) ns - 2.6mm 1.6mm 4.6mm 1.8V +150 °C 1 -55 °C -
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 40V, Microchip Technology N 350 mA 40 (Minimum) V 5 Ω 2.4V 0.8V 20 V TO-92 Through Hole 3 Single Enhancement Driver MOSFET 1 W 55 pF @ 25 V - 0.2 x 0.16 x 0.21in 6 ns VN0104 3 ns - 4.06mm 5.33mm 5.08mm 1.8V +150 °C 1 -55 °C -
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 40V, Microchip Technology N 350 mA 40 (Minimum) V 5 Ω 2.4V 0.8V 20 V TO-92 Through Hole 3 Single Enhancement Driver MOSFET 1 W 55 pF @ 25 V - 0.2 x 0.16 x 0.21in 6 ns VN0104 3 ns - 4.06mm 5.33mm 5.08mm 1.8V +150 °C 1 -55 °C -
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 600V Microchip Technology N 200 mA 600 (Minimum) V 25 Ω 4V 1.5V 20 V TO-243AA Surface Mount 3 Single Enhancement Driver MOSFET 1.6 W 150 (Maximum) pF @ 25 V - 4.6 x 2.6 x 1.6mm 25 (Maximum) ns VN2460 10 (Maximum) ns - 2.6mm 1.6mm 4.6mm 1.5V +150 °C 1 -55 °C -
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 600V Microchip Technology N 200 mA 600 (Minimum) V 25 Ω 4V 1.5V 20 V TO-243AA Surface Mount 3 Single Enhancement Driver MOSFET 1.6 W 150 (Maximum) pF @ 25 V - 4.6 x 2.6 x 1.6mm 25 (Maximum) ns VN2460 10 (Maximum) ns - 2.6mm 1.6mm 4.6mm 1.5V +150 °C 1 -55 °C -
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 60V, Microchip Technology N 310 mA 60 (Minimum) V 7.5 Ω 2.5V 0.8V 30 V TO-92 Through Hole 3 Single Enhancement Driver MOSFET 1 W 48 pF @ 25 V - 0.2 x 0.16 x 0.21in 10 (Maximum) ns VN10K 10 (Maximum) ns - 4.06mm 5.33mm 5.08mm 0.8V +150 °C 1 -55 °C -
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 60V, Microchip Technology N 300 mA 60 (Minimum) V 5 Ω 2V 0.6V 20 V TO-92 Through Hole 3 Single Enhancement Driver MOSFET 740 mW 35 pF @ 25 V - 0.2 x 0.16 x 0.21in 6 ns TN2106 3 ns - 4.06mm 5.33mm 5.08mm 1.8V +150 °C 1 -55 °C -
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 60V, Microchip Technology N 300 mA 60 (Minimum) V 6 Ω 2.4V 0.8V 20 V TO-92 Through Hole 3 Single Enhancement Driver MOSFET 1 W 35 pF @ 25 V - 0.2 x 0.16 x 0.21in 6 ns VN2106 3 ns - 4.06mm 5.33mm 5.08mm 1.8V +150 °C 1 -55 °C -
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 60V, Microchip Technology N 300 mA 60 (Minimum) V 6 Ω 2.4V 0.8V 20 V TO-92 Through Hole 3 Single Enhancement Driver MOSFET 1 W 35 pF @ 25 V - 0.2 x 0.16 x 0.21in 6 ns VN2106 3 ns - 4.06mm 5.33mm 5.08mm 1.8V +150 °C 1 -55 °C -
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