MOSFET Transistors

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Detalhes da peça Brand Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Dimensions Typical Turn-Off Delay Time Series Typical Turn-On Delay Time Forward Transconductance Height Width Length Forward Diode Voltage Maximum Operating Temperature Number of Elements per Chip Minimum Operating Temperature Transistor Material
MOSFET N-CH 500mA 60V 7.5 Ohm TO-92-3 Microchip - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
MOSFET Trans, N-Ch, 300V, 175mA, TO-92 Microchip - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
MOSFET Trans, N-Ch, 350V, 120mA, TO-92 Microchip - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
MOSFET Trans, N-Ch, 400V, 120mA, TO-92 Microchip - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
MOSFET Trans, N-Ch, 450V, 136mA, TO-92 Microchip - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
MOSFET Trans, N-Ch, 500V, 30mA, TO-92 Microchip - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
Microchip MCP87050T-U/MF N-channel MOSFET, 100 A, 25 V MCP87, 8-Pin DFN Microchip N 100 A 25 V 6 mΩ 1.6V - -8 V, +10 V DFN Surface Mount 8 Single Enhancement Power MOSFET 2.2 W 1040 pF @ 12.5 V 12.5 nC @ 4.5 V 5 x 6 x 1mm 11 ns MCP87 5 ns - 1mm 6mm 5mm - +150 °C 1 -55 °C Si
Microchip MCP87130T-U/LC N-channel MOSFET, 42 A, 25 V MCP87, 8-Pin DFN Microchip N 42 A 25 V 17.3 mΩ 1.7V - -8 V, +10 V DFN Surface Mount 8 Single Enhancement Power MOSFET 1.8 W 400 pF @ 12.5 V 5.5 nC @ 4.5 V 3.3 x 3.3 x 1mm 4.2 ns MCP87 2.2 ns - 1mm 3.3mm 3.3mm - +150 °C 1 -55 °C Si
Microchip TP2104N3-G P-channel MOSFET, 175 mA, 40 V, 3-Pin TO-92 Microchip P 175 mA 40 V 10 Ω 2V - -20 V, +20 V TO-92 Through Hole 3 Single Enhancement - 740 mW 35 pF @ -25 V - 5.08 x 4.06 x 5.33mm 5 ns - 4 ns 200s 5.33mm 4.06mm 5.08mm 2V +150 °C 1 -55 °C Si
Microchip VN2222LL-G N-channel MOSFET, 230 mA, 60 V, 3-Pin TO-92 Microchip N 230 mA 60 V 7.5 Ω 2.5V - -30 V, +30 V TO-92 Through Hole 3 Single Enhancement - 1 W 60 pF @ 25 V - 5.08 x 4.06 x 5.33mm 10 ns - 10 ns 100s 5.33mm 4.06mm 5.08mm 0.85V +150 °C 1 -55 °C Si
Microchip VP2106N3-G P-channel MOSFET, 250 mA, 60 V, 3-Pin TO-92 Microchip P 250 mA 60 V 15 Ω 3.5V - -20 V, +20 V TO-92 Through Hole 3 Single Enhancement - 1 W 45 pF @ -25 V - 5.08 x 4.06 x 5.33mm 5 ns - 4 ns 200s 5.33mm 4.06mm 5.08mm 2V +150 °C 1 -55 °C Si
Microchip VN2222LL-G N-channel MOSFET, 230 mA, 60 V, 3-Pin TO-92 Microchip N 230 mA 60 V 7.5 Ω 2.5V - -30 V, +30 V TO-92 Through Hole 3 Single Enhancement - 1 W 60 pF @ 25 V - 5.08 x 4.06 x 5.33mm 10 ns - 10 ns 100s 5.33mm 4.06mm 5.08mm 0.85V +150 °C 1 -55 °C Si
Microchip TP2104N3-G P-channel MOSFET, 175 mA, 40 V, 3-Pin TO-92 Microchip P 175 mA 40 V 10 Ω 2V - -20 V, +20 V TO-92 Through Hole 3 Single Enhancement - 740 mW 35 pF @ -25 V - 5.08 x 4.06 x 5.33mm 5 ns - 4 ns 200s 5.33mm 4.06mm 5.08mm 2V +150 °C 1 -55 °C Si
Microchip LND150N3-G N-channel MOSFET, 30 mA, 500 V Depletion, 3-Pin TO-92 Microchip N 30 mA 500 V 1 kΩ 3V - -20 V, +20 V TO-92 Through Hole 3 Single Depletion Power MOSFET 740 mW 7.5 pF @ 25 V - 5.2 x 4.19 x 5.33mm 100 ns - 90 ns - 5.33mm 4.19mm 5.2mm - +150 °C 1 -55 °C Si
Microchip VP2106N3-G P-channel MOSFET, 250 mA, 60 V, 3-Pin TO-92 Microchip P 250 mA 60 V 15 Ω 3.5V - -20 V, +20 V TO-92 Through Hole 3 Single Enhancement - 1 W 45 pF @ -25 V - 5.08 x 4.06 x 5.33mm 5 ns - 4 ns 200s 5.33mm 4.06mm 5.08mm 2V +150 °C 1 -55 °C Si
Microchip VN2410L-G N-channel MOSFET, 190 mA, 240 V, 3-Pin TO-92 Microchip N 190 mA 240 V 10 Ω 2V - -20 V, +20 V TO-92 Through Hole 3 Single Enhancement - 1 W 125 pF @ 25 V - 5.2 x 4.19 x 5.33mm 23 ns - 8 ns - 5.33mm 4.19mm 5.2mm - +150 °C 1 -55 °C Si
Microchip LND01K1-G N-channel MOSFET, 330 mA, 9 V Depletion, 5-Pin SOT-23 Microchip N 330 mA 9 V 1.4 Ω - - -12 V, +0.6 V SOT-23 Surface Mount 5 Single Depletion - 360 mW 46 pF - 3.05 x 1.75 x 1.3mm 1 ns - 3.8 ns - 1.3mm 1.75mm 3.05mm - +125 °C 1 -25 °C Si
Microchip DN3545N3-G N-channel MOSFET, 130 mA, 450 V Depletion, 3-Pin TO-92 Microchip N 130 mA 450 V 20 Ω 3.5V - -20 V, +20 V TO-92 Through Hole 3 Single Depletion - 740 mW 360 pF@ 25 V - 5.2 x 4.19 x 5.33mm 30 ns - 20 ns - 5.33mm 4.19mm 5.2mm - +150 °C 1 -55 °C Si
Microchip MIC94053YC6-TR P-channel MOSFET, 2 A, 6 V MIC9405, 6-Pin SOT-363 (SC-70) Microchip P 2 A 6 V 180 mΩ 1.2V 0.5V -6 V SOT-363 (SC-70) Surface Mount 6 Single Enhancement - 270 mW - - 2.2 x 1.35 x 1mm 60 ns MIC9405 15 ns - 1mm 1.35mm 2.2mm - +150 °C 1 -40 °C Si
Microchip DN2540N3-G N-channel MOSFET, 120 mA, 400 V Depletion, 3-Pin TO-92 Microchip N 120 mA 400 V 25 Ω 3.5V - -20 V, +20 V TO-92 Through Hole 3 Single Depletion - 1 W 200 pF @ 25 V - 5.2 x 4.19 x 5.33mm 15 ns - 10 ns - 5.33mm 4.19mm 5.2mm - +150 °C 1 -55 °C Si
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