Documentos Técnicos
Especificações
Brand
InfineonMemory Size
16kbit
Organisation
2K x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Maximum Random Access Time
20ns
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
8
Dimensions
4.97 x 3.98 x 1.48mm
Length
4.97mm
Maximum Operating Supply Voltage
3.6 V
Width
3.98mm
Height
1.48mm
Maximum Operating Temperature
+85 °C
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Number of Words
2K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2.7 V
Detalhes do produto
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
R$ 145,00
R$ 29,00 Each (In a Pack of 5) (Sem VAT)
Padrão
5
R$ 145,00
R$ 29,00 Each (In a Pack of 5) (Sem VAT)
Informações de estoque temporariamente indisponíveis.
Padrão
5
Informações de estoque temporariamente indisponíveis.
Quantidade | Preço unitário | Per Pacote |
---|---|---|
5 - 10 | R$ 29,00 | R$ 145,00 |
15 - 25 | R$ 22,69 | R$ 113,45 |
30 - 95 | R$ 22,20 | R$ 111,00 |
100 - 495 | R$ 20,04 | R$ 100,20 |
500+ | R$ 19,80 | R$ 99,00 |
Documentos Técnicos
Especificações
Brand
InfineonMemory Size
16kbit
Organisation
2K x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Maximum Random Access Time
20ns
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
8
Dimensions
4.97 x 3.98 x 1.48mm
Length
4.97mm
Maximum Operating Supply Voltage
3.6 V
Width
3.98mm
Height
1.48mm
Maximum Operating Temperature
+85 °C
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Number of Words
2K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2.7 V
Detalhes do produto
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.