Documentos Técnicos
Especificações
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
N
Pin Count
3
Minimum Operating Temperature
-55 °C
Transistor Configuration
Single
Forward Diode Voltage
1.4V
Mounting Type
Surface Mount
Minimum Gate Threshold Voltage
2.5V
Maximum Operating Temperature
+150 °C
Maximum Gate Threshold Voltage
4.5V
Maximum Drain Source Voltage
250 V
Maximum Gate Source Voltage
±20 V
Series
HiperFET
Height
4.83mm
Length
10.41mm
Width
11.05mm
Maximum Continuous Drain Current
80 A
Maximum Power Dissipation
390 W
Brand
IXYSMaximum Drain Source Resistance
16 mΩ
Package Type
D2PAK (TO-263)
Typical Gate Charge @ Vgs
83 @ 10 V nC
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R$ 178,34
Each (Sem VAT)
1
R$ 178,34
Each (Sem VAT)
1
Comprar em grandes quantidades
Quantidade | Preço unitário |
---|---|
1 - 4 | R$ 178,34 |
5 - 9 | R$ 155,38 |
10 - 24 | R$ 149,99 |
25+ | R$ 145,82 |
Documentos Técnicos
Especificações
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
N
Pin Count
3
Minimum Operating Temperature
-55 °C
Transistor Configuration
Single
Forward Diode Voltage
1.4V
Mounting Type
Surface Mount
Minimum Gate Threshold Voltage
2.5V
Maximum Operating Temperature
+150 °C
Maximum Gate Threshold Voltage
4.5V
Maximum Drain Source Voltage
250 V
Maximum Gate Source Voltage
±20 V
Series
HiperFET
Height
4.83mm
Length
10.41mm
Width
11.05mm
Maximum Continuous Drain Current
80 A
Maximum Power Dissipation
390 W
Brand
IXYSMaximum Drain Source Resistance
16 mΩ
Package Type
D2PAK (TO-263)
Typical Gate Charge @ Vgs
83 @ 10 V nC