Documentos Técnicos
Especificações
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
60 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.08mm
Width
4.06mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
5.33mm
Detalhes do produto
2N7008 N-Channel MOSFET Transistors
The Microchip 2N7008 is an enhancement-mode (normally off) transistor that utilises a vertical DMOS structure. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.
MOSFET Transistors, Microchip
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
R$ 8,52
Each (In a Pack of 25) (Sem VAT)
25
R$ 8,52
Each (In a Pack of 25) (Sem VAT)
25
Comprar em grandes quantidades
Quantidade | Preço unitário | Per Pacote |
---|---|---|
25 - 75 | R$ 8,52 | R$ 213,00 |
100+ | R$ 7,85 | R$ 196,25 |
Documentos Técnicos
Especificações
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
60 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.08mm
Width
4.06mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
5.33mm
Detalhes do produto
2N7008 N-Channel MOSFET Transistors
The Microchip 2N7008 is an enhancement-mode (normally off) transistor that utilises a vertical DMOS structure. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.