Documentos Técnicos
Especificações
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-100 mA
Maximum Collector Emitter Voltage
-65 V
Package Type
UMT
Mounting Type
Surface Mount
Maximum Power Dissipation
200 mW
Minimum DC Current Gain
220
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 2.2 x 1.35mm
Maximum Operating Temperature
+150 °C
País de Origem
Malaysia
Detalhes do produto
Small Signal PNP Transistors, Nexperia
Bipolar Transistors, Nexperia
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
P.O.A.
50
P.O.A.
50
Documentos Técnicos
Especificações
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-100 mA
Maximum Collector Emitter Voltage
-65 V
Package Type
UMT
Mounting Type
Surface Mount
Maximum Power Dissipation
200 mW
Minimum DC Current Gain
220
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 2.2 x 1.35mm
Maximum Operating Temperature
+150 °C
País de Origem
Malaysia
Detalhes do produto