Documentos Técnicos
Especificações
Brand
NexperiaTransistor Type
NPN
Maximum Continuous Collector Current
500 mA
Maximum Collector Emitter Voltage
30 V
Maximum Emitter Base Voltage
10 V
Package Type
SOT-23 (TO-236AB)
Mounting Type
Surface Mount
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
4000
Maximum Base Emitter Saturation Voltage
1.5 V
Maximum Collector Base Voltage
40 V
Maximum Collector Emitter Saturation Voltage
1 V
Maximum Collector Cut-off Current
100nA
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
-65 °C
Length
3mm
Height
1mm
Width
1.4mm
Dimensions
3 x 1.4 x 1mm
Maximum Operating Temperature
+150 °C
Detalhes do produto
Darlington Transistors, Nexperia
Bipolar Transistors, Nexperia
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
P.O.A.
Embalagem de Produção (Bobina)
100
P.O.A.
Embalagem de Produção (Bobina)
100
Documentos Técnicos
Especificações
Brand
NexperiaTransistor Type
NPN
Maximum Continuous Collector Current
500 mA
Maximum Collector Emitter Voltage
30 V
Maximum Emitter Base Voltage
10 V
Package Type
SOT-23 (TO-236AB)
Mounting Type
Surface Mount
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
4000
Maximum Base Emitter Saturation Voltage
1.5 V
Maximum Collector Base Voltage
40 V
Maximum Collector Emitter Saturation Voltage
1 V
Maximum Collector Cut-off Current
100nA
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
-65 °C
Length
3mm
Height
1mm
Width
1.4mm
Dimensions
3 x 1.4 x 1mm
Maximum Operating Temperature
+150 °C
Detalhes do produto