Documentos Técnicos
Especificações
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
32 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
37 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
100 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.22mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.73mm
Typical Gate Charge @ Vgs
40 nC @ 10 V
Height
2.38mm
Minimum Operating Temperature
-55 °C
País de Origem
Czech Republic
Detalhes do produto
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
P.O.A.
2500
P.O.A.
2500
Documentos Técnicos
Especificações
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
32 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
37 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
100 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.22mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.73mm
Typical Gate Charge @ Vgs
40 nC @ 10 V
Height
2.38mm
Minimum Operating Temperature
-55 °C
País de Origem
Czech Republic
Detalhes do produto