Documentos Técnicos
Especificações
Brand
onsemiMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
115 W
Package Type
TO-3PF
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
15.7 x 3.2 x 26.7mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Detalhes do produto
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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R$ 68,47
Each (In a Tube of 30) (Sem VAT)
R$ 69,89
Each (In a Tube of 30) (Incluindo VAT)
30
R$ 68,47
Each (In a Tube of 30) (Sem VAT)
R$ 69,89
Each (In a Tube of 30) (Incluindo VAT)
30
Comprar em grandes quantidades
Quantidade | Preço unitário | Per Tubo |
---|---|---|
30 - 30 | R$ 68,47 | R$ 2.054,10 |
60+ | R$ 66,05 | R$ 1.981,50 |
Documentos Técnicos
Especificações
Brand
onsemiMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
115 W
Package Type
TO-3PF
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
15.7 x 3.2 x 26.7mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Detalhes do produto
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.