Documentos Técnicos
Especificações
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
50 mA
Maximum Collector Emitter Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Minimum DC Current Gain
300
Transistor Configuration
Single
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
4.5 V
Maximum Operating Frequency
20 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
3.04 x 1.4 x 1.01mm
Maximum Operating Temperature
+150 °C
Detalhes do produto
Low Noise Bipolar Transistors, ON Semiconductor
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
P.O.A.
100
P.O.A.
100
Documentos Técnicos
Especificações
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
50 mA
Maximum Collector Emitter Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Minimum DC Current Gain
300
Transistor Configuration
Single
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
4.5 V
Maximum Operating Frequency
20 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
3.04 x 1.4 x 1.01mm
Maximum Operating Temperature
+150 °C
Detalhes do produto