Documentos Técnicos
Especificações
Brand
Renesas ElectronicsTransistor Type
NPN + PNP
Maximum DC Collector Current
65 mA
Maximum Collector Emitter Voltage
8 V
Package Type
SOIC
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Transistor Configuration
Isolated
Maximum Collector Base Voltage
12 V
Maximum Emitter Base Voltage
5.5 V
Maximum Operating Frequency
8000 MHz
Pin Count
16
Number of Elements per Chip
5
Dimensions
1.5 x 10 x 4mm
Maximum Operating Temperature
+125 °C
País de Origem
Philippines
Detalhes do produto
Transistor Arrays, Intersil
Bipolar Transistors, Intersil
Informações de estoque temporariamente indisponíveis.
Verifique novamente mais tarde.
P.O.A.
48
P.O.A.
48
Documentos Técnicos
Especificações
Brand
Renesas ElectronicsTransistor Type
NPN + PNP
Maximum DC Collector Current
65 mA
Maximum Collector Emitter Voltage
8 V
Package Type
SOIC
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Transistor Configuration
Isolated
Maximum Collector Base Voltage
12 V
Maximum Emitter Base Voltage
5.5 V
Maximum Operating Frequency
8000 MHz
Pin Count
16
Number of Elements per Chip
5
Dimensions
1.5 x 10 x 4mm
Maximum Operating Temperature
+125 °C
País de Origem
Philippines
Detalhes do produto